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SSF17N60A Datasheet

  • SSF17N60A

  • Advanced Power MOSFET

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
碌
A (Max.) @ V
DS
= 600V
Lower R
DS(ON)
: 0.356
鈩?/div>
(Typ.)
SSF17N60A
BV
DSS
= 600 V
R
DS(on)
= 0.45
鈩?/div>
I
D
= 9 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
2
O
1
O
1
O
3
O
o
o
Value
600
9
5.7
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
o
68
+ 30
_
884
9
10
3.0
100
0.8
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
胃
JC
R
胃
JA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.25
40
Units
o
C/W
Rev. B
漏1999 Fairchild Semiconductor Corporation

SSF17N60A 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 600 V

  • +/- 30 V

  • 9 A

  • 0.45 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-3PF

  • Tube

  • 36 ns

  • - 55 C

  • 100 W

  • 26 ns

  • 30

  • 112 ns

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