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SS26/D Datasheet

  • SS26/D

  • Surface Mount Schottky Power Rectifier

  • 65.55KB

  • 4頁(yè)

  • ETC

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SS26
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
http://onsemi.com
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Compact Package with J-Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over-Voltage Protection
Low Forward Voltage Drop
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8鈥?/div>
Weight: 95 mg (approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260擄C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13鈥?Reel, Add 鈥淭3鈥?Suffix
to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = C
ESD Ratings:
Human Body Model = 3B
Marking: SS26
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
60 VOLTS
Mechanical Characteristics:
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
SS26
SS26 = Device Code
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
L
= 95擄C)
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Storage/Operating Case
Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V
R
, T
J
= 25擄C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
Value
60
Unit
V
ORDERING INFORMATION
Device
Package
SMB
Shipping
2500/Tape & Reel
2.0
40
A
A
SS26T3
T
stg
, T
C
T
J
dv/dt
-55 to +150
-55 to +125
10,000
擄C
擄C
V/ms
漏
Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 1
Publication Order Number:
SS26/D

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