SS1P3L & SS1P4L
New Product
Vishay General Semiconductor
Low V
F
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
鈥?Very low profile - typical height of 1.0 mm
鈥?Ideal for automated placement
鈥?Low forward voltage drop, low power losses
鈥?High efficiency
鈥?Low thermal resistance
鈥?Meets MSL level 1, per J-STD-020C
DO-220AA (SMP)
鈥?Solder Dip 260 擄C, 40 seconds
鈥?Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes the cathode end
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
T
j
max.
1A
30 V, 40 V
50 A
11.25 mJ
0.35 V, 0.38 V
150 擄C
MAXIMUM RATINGS
(T
A
= 25 擄C unless otherwise specified)
PARAMETER
Device marking code
Maximum repetive peak reverse voltage
Maximum average forward rectified current see Fig. 1
T
L
= 140 擄C
T
L
= 135 擄C
V
RRM
I
F(AV)
I
FSM
E
AS
dv/dt
T
J,
T
STG
SYMBOL
SS1P3L
13L
30
1.0
1.5
50
11.25
10000
- 55 to + 150
SS1P4L
14L
40
V
A
A
mJ
V/碌s
擄C
UNIT
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
Non-repetitive avalanche energy at I
AS
= 1.5 A, L = 10 mH, T
J
= 25 擄C
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS
(T
A
= 25 擄C unless otherwise specified)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum reverse current at rated V
R (1)
Typical junction capacitance
TEST CONDITIONS
at I
F
= 1.0 A, T
J
= 25 擄C
at I
F
= 1.0 A, T
J
= 125 擄C
T
J
= 25 擄C
T
J
= 125 擄C
at 4.0 V, 1 MHz
SYMBOL
V
F
I
R
C
J
SS1P3L
0.45
0.35
200
20
110
SS1P4L
0.48
0.38
150
15
130
UNIT
V
碌A(chǔ)
mA
pF
Document Number 88915
07-Feb-06
www.vishay.com
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