鈥?/div>
1/
Replaces DO-4 and DO-5
Ultra Fast Recovery
PIV to 1200 Volts
Low Reverse Leakage
Hermetically Sealed Void-Free Construction
1/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Equivalent to 1N6690 - 1N6693.
TX, TXV and Space Level Screening Available
PIND Testing not required on Void-Free Devices per
MIL-PRF-19500
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SRM6UF
SRM8UF
SRM10UF
SRM12UF
SYMBOL
V
RRM
V
RWM
V
R
Io
VALUE
600
800
1000
1200
20
UNITS
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, T
C
= 100
o
C
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, T
A
= 25
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case
Axial Lead, L = 3/8" (
)
Square Tab (SMS)
Button (BTR)
Amps
I
FSM
Top & Tstg
R
胃
JL
R
胃
JE
R
胃
JC
375
-65 TO +175
3.0
2.5
1.0
Amps
o
C
o
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0129E