WTE
POWER SEMICONDUCTORS
SR120 鈥?SR1100
Pb
1.0A SCHOTTKY BARRIER DIODE
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
High Current Capability
A
B
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
D
A
C
Mechanical Data
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!
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!
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Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add 鈥?LF鈥?Suffix to Part Number, See Page 4
DO-41
Dim
Min
Max
25.4
鈥?/div>
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
L
= 100擄C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25擄C unless otherwise specified
SR120 SR130 SR140
20
14
30
21
40
28
SR150 SR160
50
35
1.0
60
42
SR180 SR1100
80
56
100
70
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25擄C
@T
A
= 100擄C
I
FSM
V
FM
I
RM
C
j
R
JL
R
JA
T
j
, T
STG
110
0.50
40
0.70
0.5
10
80
15
50
-65 to +150
0.85
A
V
mA
pF
擄C/W
擄C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SR120 鈥?SR1100
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漏 2006 Won-Top Electronics
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