TRANSISTOR MODULE
Hi-
SQD400BA60
UL;E76102 M
SQD400BA60
is a Darlington power transistor module with a
ULTRA HIGH
high
speed, high power Darlington transistor. The transistor has a reverse paralleled fast
recovery diode (trr
200ns).
The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
h
FE
,
I
C
400A, V
CEX
600V
Low saturation voltage for higher efficiency.
ULITRA HIGH DC current gain h
FE
. h
FE
750
Isolated mounting base
IV
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo,
UPS, Switching
Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting M6
Terminal M6
Terminal M4
A.C.1minute
Recommended Value 43kgf
B
Recommended Value 43kgf
B
Recommended Value 12.5kgf
B
Typical Value
T
C
25
40
=pw 1ms
V
BE
2V
Conditions
Ratings
SQD400BA60
600
600
10
400 800
400
24
1500
150
40
125
2500
4.7 (48)
4.7 (48)
1.5 (15)
460
Tj 25
Unit
V
V
V
A
A
A
W
V
N m
( f
B)
g
Tj 25
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO SUS
V
CEX SUS
h
FE
V
CE
V
BE
sat
sat
Item
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning
Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
V
CB
V
CBO
V
EB
V
EBO
Ic 1A
Ic 80A I
B2
Conditions
Ratings
Min.
Typ.
Max.
4.0
1600
450
Unit
mA
mA
V
8A
600
750
2.5
3.0
2.0
8.0
2.0
1.8
5V
200
0.083
0.25
Ic 400A V
CE
2.5V
Ic 400A I
B
530mA
Ic 400A I
B
530mA
Vcc 300V Ic 400A
8A
I
B1
0.8A I
B2
Ic 400A
Vcc 300V, Ic
400A, di/dt 300A/ s, V
BE
Transistor part
Diode part
V
V
s
V
ns
/W
ton
ts
tf
V
ECO
trr
Rth j-c
57
1
2
