Ultra-Fast-Recovery Rectifier Diodes (Power Surface Mount)
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(擄C)
Tstg
(擄C)
V
F
(V)
max per
element
I
R
(碌A(chǔ))
I
F
(A)
Electrical Characteristics (Ta = 25擄C)
t
rr
聦
t
rr
聧
I
R
(H)
(ns)
(ns)
(mA)
I
F
/
I
RP
(mA)
I
F
/
I
RP
(mA)
Others
Rth ( j-c)
(擄C/ W)
Mass
Fig.
(g)
V
R
= V
RM
V
R
=V
RM,
Ta=100擄C
max per element max per element
SPX-G32S
200
3.0
6.0
50
鈥?0 to +150 0.98 3.0
80
50
10
30 100/100
25
100/200
5.0
0.41
A
SPX-62S
SPX-G32S
4
Average Forward Current I
F (AV)
(A)
Tc鈥擨
F(AV)
Derating
V
R
=200V
V
F
鈥擨
F
Characteristics
(Typical)
50
I
FSM
(A)
50
I
FMS
Rating
I
FSM
(A)
10
3
Sinewave
D.C.
Forward Current I
F
(A)
40
20ms
1
Peak Forward Surge Current
30
2
t /T = 1/6
1
0.1
T
a
= 150潞C
100潞C
60潞C
25潞C
20
t /T = 1/3
t /T = 1/2
0.01
10
0
120
125
130 135 140 145
Case Temperature Tc
(擄C)
150
0.001
0
0
0.2
0.4 0.6 0.8 1.0 1.2
Forward Voltage V
F
(V)
1.4
1
5
10
Overcurrent Cycles
50
SPX-62S
10
Average Forward Current I
F (AV)
(A)
Tc鈥擨
F(AV)
Derating
V
R
=200V
V
F
鈥擨
F
Characteristics
(Typical)
50
10
Forward Current I
F
(A)
I
FSM
(A)
80
I
FMS
Rating
I
FSM
(A)
20ms
8
6
1
D.C.
Peak Forward Surge Current
t /T = 1/2
60
40
4
2
Sinewave
t /T = 1/3
t /T = 1/6
0.1
T
a
= 150潞C
100潞C
60潞C
25潞C
0.01
20
0
60
80
100
120
140
160
0.001
0
0
0.2
Case Temperature Tc
(擄C)
0.4 0.6 0.8 1.0 1.2
Forward Voltage V
F
(V)
1.4
1
5
10
Overcurrent Cycles
50
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
1.7
鹵0.5
5.4
鹵0.4
2.9
1.37
0.7
5.0
5.5
鹵0.4
聦
聧
1.2max
聨
2.5
鹵0.4
1.15
鹵0.1
2.29
鹵0.5
2.29
鹵0.5
4.9
0 to 0.25
0.5
鹵0.2
0.8
鹵0.1
0.8
鹵0.1
0.16
External Dimensions
Fig.
A
6.5
鹵0.4
2.3
鹵0.4
0.55
鹵0.1
5.4
4.1
1
鹵0.1
2 (Common to backside of case)
Cathode
Cathode (Common)
3
Anode
Anode
0.55
1.5 max
1
2
3
聦
Type No.
聧
Polarity
聨
Lot No.
SPX-G32S
SPX-62S
N.C
Anode
68
SANKEN
1
