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SPW20N60S5 Datasheet

  • SPW20N60S5

  • Cool MOS⑩ Power Transistor

  • 11頁

  • INFINEON   INFINEON

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上傳產(chǎn)品規(guī)格書

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SPW20N60S5
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
鈥?/div>
Improved transconductance
V
DS
R
DS(on)
I
D
600
0.19
20
P-TO247
V
鈩?/div>
A
Type
SPW20N60S5
Package
P-TO247
Ordering Code
Q67040-S4238
Marking
20N60S5
Maximum Ratings
Parameter
Symbol
I
D
Value
Unit
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
A
20
13
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 50 V
I
D puls
E
AS
40
690
1
20
鹵20
鹵
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 20 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25擄C
A
V
W
擄C
V
GS
P
tot
T
j ,
T
stg
208
-55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30

SPW20N60S5 產(chǎn)品屬性

  • Infineon

  • MOSFET

  • N-Channel

  • 600 V

  • +/- 20 V

  • 20 A

  • 0.19 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 30 ns

  • - 55 C

  • 208 W

  • 25 ns

  • 240

  • 130 ns

  • SP000012463 SPW20N60S5CKSA1 SPW20N60S5FKSA1 SPW20N60S5XK

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