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SPW20N60C2 Datasheet

  • SPW20N60C2

  • Cool MOS⑩ Power Transistor

  • 125.14KB

  • 11頁

  • INFINEON   INFINEON

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Final data
SPW20N60C2
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
鈥?/div>
Improved noise immunity
Product Summary
V
DS
R
DS(on)
I
D
600
0.19
20
P-TO247
V
鈩?/div>
A
Type
SPW20N60C2
Package
P-TO247
Ordering Code
Q67040-S4321
Marking
20N60C2
Maximum Ratings, at
T
C
= 25擄C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
Symbol
I
D
Value
20
13
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=10A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
40
690
1
20
6
鹵20
208
-55... +150
A
V/ns
V
W
擄C
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax 1)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode dv/dt
I
S
=20A,
V
DS
<
V
DD
, di/dt=100A/碌s,
T
jmax
=150擄C
Gate source voltage
Power dissipation,
T
C
= 25擄C
Operating and storage temperature
Page 1
2002-10-07

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