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Power-Transistor
Feature
N-Channel
Enhancement mode
175擄C operating temperature
Avalanche rated
dv/dt rated
P-TO251
V
A
Type
SPD11N10
SPU11N10
Package
P-TO252
P-TO251
Ordering Code
Q67042-S4121
Q67042-S4122
Marking
11N10
11N10
Maximum Ratings,at
T
j
= 25 擄C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25擄C
T
C
=100擄C
Symbol
I
D
Value
10.5
7.8
Unit
A
Pulsed drain current
T
C
=25擄C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
41.2
60
6
鹵20
50
-55... +175
55/175/56
mJ
kV/碌s
V
W
擄C
Avalanche energy, single pulse
Reverse diode dv/dt
Gate source voltage
Power dissipation
T
C
=25擄C
I
S
=10.5A,
V
DS
=80V,
di/dt=200A/碌s,
T
jmax
=175擄C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
=10.5 A ,
V
DD
=25V,
R
GS
=25
Page 1
2002-01-31
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