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SPU07N60C2 Datasheet

  • SPU07N60C2

  • Cool MOS⑩ Power Transistor

  • 11頁

  • INFINEON   INFINEON

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上傳產品規(guī)格書

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Final data
SPD07N60C2
SPU07N60C2
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Worldwide best
R
DS(on)
in TO-251 and TO-252
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
鈥?/div>
Improved noise immunity
P-TO251
Product Summary
V
DS
R
DS(on)
I
D
600
0.6
7.3
P-TO252
V
鈩?/div>
A
Type
SPD07N60C2
SPU07N60C2
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4312
Q67040-S4311
Marking
07N60C2
07N60C2
Maximum Ratings, at
T
C
= 25擄C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
Symbol
I
D
Value
7.3
4.6
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
14.6
230
0.5
7.3
6
鹵20
83
-55... +150
A
V/ns
V
W
擄C
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax 1)
I
D
=7.3A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode dv/dt
I
S
=7.3A,
V
DS
<
V
DD
, di/dt=100A/碌s,
T
jmax
=150擄C
Gate source voltage
Power dissipation,
T
C
= 25擄C
Operating and storage temperature
Page 1
2002-10-07

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