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SPU04N60S5 Datasheet

  • SPU04N60S5

  • Cool MOS⑩ Power Transistor

  • 11頁

  • INFINEON   INFINEON

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SPU04N60S5
SPD04N60S5
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
鈥?/div>
Improved transconductance
V
DS
R
DS(on)
I
D
P-TO252.
2
3
1
600
0.95
4.5
P-TO251.
V
鈩?/div>
A
1
2
3
Type
Package
Ordering Code
SPU04N60S5
SPD04N60S5
P-TO251.
P-TO252.
Q67040-S4228
Q67040-S4202
Marking
04N60S5
04N60S5
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
Symbol
I
D
Value
4.5
2.8
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 3.4 A,
V
DD
= 50 V
I
D puls
E
AS
9
130
0.4
4.5
鹵20
鹵
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 4.5 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25擄C
A
V
W
擄C
V
GS
P
tot
T
j ,
T
stg
50
-55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30

SPU04N60S5 產(chǎn)品屬性

  • Infineon

  • MOSFET

  • N-Channel

  • 600 V

  • +/- 20 V

  • 4.5 A

  • 0.95 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-252

  • Tube

  • 15 ns

  • - 55 C

  • 50 W

  • 30 ns

  • 75

  • 60 ns

  • SP000012424 SPU04N60S5BKMA1 SPU04N60S5XK

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