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SPP07N60S5, SPB07N60S5

SPI07N60S5

Cool MOS鈩?Power Transistor

Feature

鈥?/div>

New revolutionary high voltage technology

鈥?/div>

Worldwide best

R

DS(on)

in TO 220

鈥?/div>

Ultra low gate charge

鈥?/div>

Periodic avalanche rated

鈥?/div>

Extreme dv/dt rated

鈥?/div>

Ultra low effective capacitances

鈥?/div>

Improved transconductance

P-TO220-3-1

V

DS

R

DS(on)

I

D

P-TO262

P-TO263-3-2

600

0.6

7.3

V

鈩?/div>

A

P-TO220-3-1

2

1

23

Type

Package

Ordering Code

SPP07N60S5

SPB07N60S5

SPI07N60S5

Maximum Ratings

Parameter

P-TO220-3-1

P-TO263-3-2

P-TO262

Q67040-S4172

Q67040-S4185

Q67040-S4328

Marking

07N60S5

Symbol

I

D

Value

Unit

Continuous drain current

T

C

= 25 擄C

T

C

= 100 擄C

A

7.3

4.6

Pulsed drain current,

t

p

limited by

T

jmax

Avalanche energy, single pulse

I

D

= - A,

V

DD

= 50 V

I

D puls

E

AS

14.6

230

0.5

7.3

鹵20

鹵

30

mJ

Avalanche energy, repetitive

t

AR

limited by

T

jmax

1)

E

AR

I

D

= 7.3 A,

V

DD

= 50 V

Avalanche current, repetitive

t

AR

limited by

T

jmax

I

AR

Gate source voltage

V

GS

Gate source voltage AC (f >1Hz)

Power dissipation,

T

C

= 25擄C

A

V

W

擄C

V

GS

P

tot

T

j ,

T

stg

83

-55... +150

Operating and storage temperature

Rev. 2.1

Page 1

2004-03-30

型號

版本

描述

廠商

下載
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SPPBI07N60S5 Datasheet

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