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SPU04N60S5

SPD04N60S5

Cool MOS鈩?Power Transistor

Feature

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New revolutionary high voltage technology

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Ultra low gate charge

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Periodic avalanche rated

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Extreme dv/dt rated

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Ultra low effective capacitances

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Improved transconductance

V

DS

R

DS(on)

I

D

P-TO252.

2

3

1

600

0.95

4.5

P-TO251.

V

鈩?/div>

A

1

2

3

Type

Package

Ordering Code

SPU04N60S5

SPD04N60S5

P-TO251.

P-TO252.

Q67040-S4228

Q67040-S4202

Marking

04N60S5

Maximum Ratings

Parameter

Continuous drain current

T

C

= 25 擄C

T

C

= 100 擄C

Symbol

I

D

Value

4.5

2.8

Unit

A

Pulsed drain current,

t

p

limited by

T

jmax

Avalanche energy, single pulse

I

D

= 3.4 A,

V

DD

= 50 V

I

D puls

E

AS

9

130

0.4

4.5

鹵20

鹵

30

mJ

Avalanche energy, repetitive

t

AR

limited by

T

jmax

1)

E

AR

I

D

= 4.5 A,

V

DD

= 50 V

Avalanche current, repetitive

t

AR

limited by

T

jmax

I

AR

Gate source voltage

V

GS

Gate source voltage AC (f >1Hz)

Power dissipation,

T

C

= 25擄C

A

V

W

擄C

V

GS

P

tot

T

j ,

T

stg

50

-55... +150

Operating and storage temperature

Rev. 2.1

Page 1

2004-03-30

型號

版本

描述

廠商

下載
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SPPB04N60S5 Datasheet

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