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=
Power-Transistor
N-Channel
Enhancement mode
175擄C operating temperature
Avalanche rated
dv/dt rated
P-TO262-3-1
P-TO263-3-2
Product Summary
V
DS
R
DS(on)
I
D
100
33
47
P-TO220-3-1
V
A
Type
SPP47N10
SPB47N10
SPI47N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4183
Q67040-S4173
tbd
Marking
47N10
47N10
47N10
Maximum Ratings,at
T
j
= 25 擄C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25擄C
T
C
=100擄C
Symbol
I
D
Value
47
33
Unit
A
Pulsed drain current
T
C
=25擄C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
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2001-08-24
kV/碌s
V
W
擄C
mJ
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
=47A,
V
DS
=0V,
di/dt=200A/碌s
Gate source voltage
Power dissipation
T
C
=25擄C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
=47 A ,
V
DD
=25V,
R
GS
=25
m