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SPP42N03S2L-13 Datasheet

  • SPP42N03S2L-13

  • OptiMOS Power-Transistor

  • 10頁

  • INFINEON   INFINEON

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SPI42N03S2L-13
SPP42N03S2L-13
SPB42N03S2L-13
OptiMOS
廬
Power-Transistor
Features
鈥?N-channel
鈥?Enhancement mode
鈥?Logic level
鈥?Excellent gate charge x
R
DS(on)
product (FOM)
鈥?Superior thermal resistance
鈥?175 擄C operating temperature
鈥?Avalanche rated
鈥?dv /dt rated
P-TO262-3-1
Product Summary
V
DS
R
DS(on),max
I
D
30
12.9
42
V
m鈩?/div>
A
P-TO263-3-2
P-TO220-3-1
Type
SPP42N03S2L-13
SPB42N03S2L-13
SPI42N03S2L-13
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4034
Q67042-S4035
Q67042-S4104
Marking
2N03L13
2N03L13
2N03L13
Maximum ratings,
at
T
j
=25 擄C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol Conditions
I
D
T
C
=25 擄C
T
C
=100 擄C
Pulsed drain current
Avalanche energy, single pulse
Repetitive avalanche energy
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
E
AR
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 擄C
T
C
=25 擄C
I
D
=42 A,
R
GS
=25
鈩?/div>
limited by
T
jmax 2)
I
D
=42 A,
V
DS
=24 V,
di /dt =200 A/碌s,
T
j,max
=175 擄C
Value
42
42
248
110
8
6
鹵20
83
-55 ... 175
55/175/56
mJ
mJ
kV/碌s
V
W
擄C
Unit
A
Rev. 2.0
page 1
2004-06-04

SPP42N03S2L-13 產(chǎn)品屬性

  • Infineon

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 20 V

  • 42 A

  • 12.9 m Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220AB

  • Tube

  • 14.5 ns

  • 42 S / 21 S

  • - 55 C

  • 83 W

  • 12 ns

  • 500

  • 24 ns

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