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SPP20N60C2 Datasheet

  • SPP20N60C2

  • Cool MOS⑩ Power Transistor

  • 14頁

  • INFINEON   INFINEON

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Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Worldwide best
R
DS(on)
in TO 220
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
1
P-TO220-3-31
2
3
Product Summary
V
DS
@
T
jmax
650
R
DS(on)
I
D
P-TO220-3-31
P-TO263-3-2
V
鈩?/div>
A
0.19
20
P-TO220-3-1
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4320
Q67040-S4322
Marking
20N60C2
20N60C2
20N60C2
P-TO220-3-31 Q67040-S4333
Maximum Ratings
Parameter
Symbol
I
D
Value
SPP_B
SPA
Unit
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
A
20
13
20
1)
13
1)
40
690
1
20
6
鹵20
鹵
30
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=10A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
40
690
1
20
6
鹵20
鹵
30
A
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax 2)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 20 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
碌
s,
T
jmax
=150擄C
A
V/ns
V
W
d
v
/d
t
V
GS
V
GS
P
tot
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25擄C
208
34.5
Operating and storage temperature
Page 1
T
j ,
T
stg
-55...+150
擄C
2002-08-12

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