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SPP04N60C2 Datasheet

  • SPP04N60C2

  • Cool MOS⑩ Power Transistor

  • 14頁

  • INFINEON   INFINEON

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Final data
SPP04N60C2, SPB04N60C2
SPA04N60C2
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
P-TO220-3-31
Product Summary
V
DS
@
T
jmax
650
R
DS(on)
I
D
P-TO263-3-2
V
鈩?/div>
A
0.95
4.5
P-TO220-3-1
1
P-TO220-3-31
2
3
Type
SPP04N60C2
SPB04N60C2
SPA04N60C2
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4304
Q67040-S4305
Marking
04N60C2
04N60C2
04N60C2
P-TO220-3-31 Q67040-S4330
Maximum Ratings
Parameter
Symbol
I
D
Value
SPP_B
SPA
Unit
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
A
4.5
2.8
4.5
1)
2.8
1)
9
130
0.4
4.5
6
鹵20
鹵
30
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=3.6A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
9
130
0.4
4.5
6
鹵20
鹵
30
A
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax 2)
I
D
=4.5A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 4.5 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
碌
s,
T
jmax
=150擄C
A
V/ns
V
W
d
v
/d
t
V
GS
V
GS
P
tot
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25擄C
50
31
Operating and storage temperature
Page 1
T
j ,
T
stg
-55...+150
擄C
2002-08-12

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