鈥?/div>
Taping type
Absolute Maximum Ratings at Ta=25
擄
C, 65%RH
(as per JIS C7032)
Parameter
Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Rating
50
5
70
20
5
20
70
- to +80
-20
- to +100
-30
Unit
mA
V
mW
V
V
mA
mW
擄C
擄C
Input LED
Output
Phototransistor
Electro-Optical Characteristics at Ta=25
擄
C, 65%RH
Parameter
Symbol
Forward Voltage
V
F
Input
Reverse Current
I
R
Output
Dark Current
I
CEO
Collector Output
I
C
Leakage Current
I
LEAK
V
CE
(sat)
Coupled Collector Emitter
Rise Time
tr
Fall Time
tf
1
Location of reflector is shown in Fig. 1.
*
Condition
I
F
=10mA
V
R
=5V
I
F
=0mA, V
CE
=10V
I
F
=10mA,V
CE
=5V
*1
I
F
=10mA,V
CE
=5V
*2
I
F
=10mA, I
C
=50碌A(chǔ)
V
CC
=5V, R
L
=100鈩?/div>
I
C
=1mA
Min.
1.0
-
-
-
-
80
-
-
-
-
-
-
-
-
Typ.
1.2
-
-
-
-
-
-
-
-
-
-
5
5
Max.
1.6
10
200
1100
1
0.5
--
--
Unit
V
碌A(chǔ)
nA
碌A(chǔ)
碌A(chǔ)
V
碌s
碌s
AL V.E. film
Glass plate (t=1mm)
*2
*3
No reflector
Table of Classification of Collector Output
Class
Ic (碌A(chǔ))
A
1100 to 450
B
600 to 260
C
350 to 150
D
200 to 80
Fig. 1
Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6030 1/6
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