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SPC6801

P-Channel Trench MOSFET with Schottky Diode

DESCRIPTION

The SPC6801combines the Trench MOSFET technology

with a very low forward voltage drop Schottky barrier

rectifier in an TSOP-6P package. The Trench MOSFET is

the P-Channel enhancement mode power field effect

transistors are produced using high cell density , DMOS

trench technology. This high density process is especially

tailored to minimize on-state resistance and provide

superior switching performance. The Schottky diode is

provided to facilitate the implementation of a

bidirectional blocking switch, or for DC-DC conversion

applications.

APPLICATIONS

Battery Powered System

DC/DC Converter

Load Switch

Cell Phone

FEATURES

P-Channel

-30V/-2.8A,RDS(ON)=105m鈩VGS=- 10V

-30V/-2.5A,RDS(ON)=115m鈩VGS=-4.5V

-30V/-1.5A,RDS(ON)=150m鈩VGS=-2.5V

Schottky

VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

TSOP鈥?6P package design

PIN CONFIGURATION( TSOP鈥?6P )

PART MARKING

2006/11/25

Ver.1

Page 1

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SPC6801相關型號PDF文件下載

• 型號
  版本
  描述
  廠商
  下載
• SPC6332
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