SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
SIPMOS
廬
Power-Transistor
Features
鈥?N-channel - Enhancement mode
鈥?Automotive AEC Q101 qualified
鈥?MSL1 up to 260擄C peak reflow
鈥?175擄C operating temperature
鈥?Avalanche test
鈥?Repetive Avalanche up to
T
jmax
= 175 擄C
鈥?dv /dt rated
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
P-TO263-3-2
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
55
7.7
80
V
m鈩?/div>
A
P-TO262-3-1
P-TO220-3-1
V
DD
=30 V, I
D
=80 A, V
GS
=10 V, R
G
=2.4
鈩?/div>
Marking
Q67060-S6185
1N0608
T
C
=25 擄C,
V
GS
=10 V
Q67060-S6187
1N0608
T
C
=100 擄C,
V
GS
=10 V
Q67060-S6186
1N0608
Maximum ratings,
at
T
j
=25 擄C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol Conditions
I
D
T
C
=25 擄C,
V
GS
=10 V
Value
Unit
A
80
T
C
=100 擄C,
V
GS
=10 V
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, periodic
2)
Reverse diode dv /dt
2)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
I
D,pulse
E
AS
E
AR
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 擄C
T
C
=25 擄C
I
D
=80 A,
R
GS
=25
鈩?
V
DD
=25 V
T
j
鈮?75
擄C
I
D
=80 A,
V
DS
=40 V,
di /dt =200 A/碌s,
T
j,max
=175 擄C
80
320
700
30
6
鹵20
300
-55 ... +175
55/175/56
2004-11-30
kV/碌s
V
W
擄C
mJ
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