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SPB11N60C3XT Datasheet

  • SPB11N60C3XT

  • Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-El...

  • 14頁

  • INFINEON   INFINEON

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Final data
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
V
DS
@
T
jmax
R
DS(on)
I
D
650
0.38
11
V
鈩?/div>
A
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
High peak current capability
鈥?/div>
Improved transconductance
P-TO220-3-31
1
2
3
P-TO220-3-31
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
鈥?/div>
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N60C3
SPB11N60C3
SPI11N60C3
SPA11N60C3
Maximum Ratings
Parameter
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4395
Q67040-S4396
Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
11N60C3
P-TO220-3-31 Q67040-S4408
Symbol
I
D
11
7
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
33
340
0.6
11
鹵20
鹵30
125
Value
SPP_B
SPP_B_I
SPA
Unit
A
11
1)
7
1)
33
340
0.6
11
鹵20
鹵30
33
W
擄C
A
V
A
mJ
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25擄C
Operating and storage temperature
-55...+150
Page 1
2003-07-01

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