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SPB03N60S5 Datasheet

  • SPB03N60S5

  • Cool MOS⑩ Power Transistor

  • 10頁

  • INFINEON   INFINEON

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上傳產品規(guī)格書

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SPP03N60S5
SPB03N60S5
Cool MOS鈩?Power Transistor
Feature
鈥?/div>
New revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?/div>
Periodic avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?/div>
Ultra low effective capacitances
鈥?/div>
Improved transconductance
P-TO220-3-1
V
DS
R
DS(on)
I
D
P-TO263-3-2
600
1.4
3.2
V
鈩?/div>
A
P-TO220-3-1
2
1
23
Type
Package
Ordering Code
SPP03N60S5
SPB03N60S5
P-TO220-3-1
P-TO263-3-2
Q67040-S4184
Q67040-S4197
Marking
03N60S5
03N60S5
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
Symbol
I
D
Value
3.2
2
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 2.4 A,
V
DD
= 50 V
I
D puls
E
AS
5.7
100
0.2
3.2
鹵20
鹵
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 3.2 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25擄C
A
V
W
擄C
V
GS
P
tot
T
j ,
T
stg
38
-55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30

SPB03N60S5 產品屬性

  • Infineon

  • MOSFET

  • N-Channel

  • 600 V

  • +/- 20 V

  • 3.2 A

  • 1.4 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-263

  • Reel

  • 15 ns

  • - 55 C

  • 38 W

  • 25 ns

  • 1

  • 40 ns

  • SP000012341 SPB03N60S5ATMA1 SPB03N60S5XT

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