鈥?/div>
Multi-Carrier Applications
Symbol
f
0
P
1dB
S
21
VSWR
OIP
3
NF
Icc
R
th j-l
Parameters: Test Conditions:
Z
0
= 50 Ohms Temp = 25
潞
C, Vcc=5.0V
Frequency of Operation
Output Power at 1dB Compression
Small Signal Gain
Input VSWR
Output Third Order Intercept Point
Power out per tone = +14dBm
Noise Figure
Device Current
Ibias
= 10mA,
Ic1
= 70mA,
Ic2
= 320 mA
Units
MHz
dB m
dB
-
dB m
dB
mA
潞C/W
Min.
2110
Typ.
2140
28
23
1.5:1
47
5.0
400
32
Max.
2170
Thermal Resistance (junction - lead)
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
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Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101432 Rev B