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AMPS, ISM Applications
Symbol
f
0
P
1dB
AC P
S
21
VSWR
OIP
3
NF
I
CC
V
CC
R
th j-l
Parameters: Test Conditions:
Z
0
= 50 Ohms Temp = 25
潞
C, V
CC
= 5.0V
Frequency of Operation
Output Power at 1dB Compression
Adjacent Channel Power
IS-95 @880 MHz, 鹵885 KHz offset, P
OUT
=20.7 dBm
Small Signal Gain, 880 MHz
Input VSWR
Output Third Order Intercept Point
Power out per tone = +14 dBm
Noise Figure
Device Current
I
BIAS
= 10mA,
I
C1
= 70mA,
I
C2
= 320mA
Units
MHz
dB m
dB c
dB
-
dB m
dB
mA
V
潞C/W
Min.
810
Typ.
900
29.0
-55.0
Max.
960
-52.0
34.5
31.5
33.0
1.5:1
47.0
5.0
360
4.75
400
5.0
31
425
5.25
Device Voltage
Thermal Resistance (junction - lead), T
L
= 85潞C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102012 Rev F