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Multi-Carrier Applications
RFOUT/
VCC
Input
Match
Symbol
f
0
P
1dB
S
21
S
11
OIP
3
Icc
R
th
, j-l
Parameters: Test C onditions:
Z
0
= 50 Ohms, VC C =5V, Temp = 27潞C
Frequency of Operati on
Output Power at 1dB C ompressi on
Vc
1
, Vbi as, Vc
2
= 5.0V
Small Si gnal Gai n
Input VSWR
Output Thi rd Order Intercept Poi nt
Power out per tone = +14 dBm
D evi ce C urrent, VC C = 5V
Thermal Resi stance (juncti on - lead)
U nits
MHz
dB m
dB
-
dB m
mA
潞C /W
Min.
1930
Typ.
Max.
1990
29.5
12.0
1.5:1
48.0
320
40
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subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
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1
http://www.stanfordmicro.com
EDS-101428 Rev A