SP8K3
Transistors
Switching (30V, 7.0A)
SP8K3
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
External dimensions
(Unit : mm)
SOP8
5.0鹵0.2
(5)
(8)
6.0鹵0.3
3.9鹵0.15
Max.1.75
Structure
Silicon N-channel
MOS FET
1.5鹵0.1
0.15
1.27
0.4鹵0.1
0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25擄C)
It is the same ratings for the Tr. 1 and Tr. 2.
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
鈭?
Pw 10碌s, Duty cycle 1%
鈭?
MOUNTED ON A CERAMIC BOARD.
Equivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
30
20
鹵7.0
鹵28
1.6
6.4
2
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
鈭?
鈭?
鈭?
鈭?
鈭?
0.5鹵0.1
(1)
(4)
0.2鹵0.1
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
鈭?
鈭?
(1)
(2)
(3)
(4)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
鈭桝
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
(Ta=25擄C)
Parameter
Channel to ambient
鈭桵OUNTED
ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
擄C
/ W
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