鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
ns
(T
a
=25擄C)
Unit
V
V
A
A
W
擄C/W
擄C/W
Vrms
擄C
擄C
Conditions
I
D
=100
碌
A, V
GS
=0V
V
GS
=鹵20V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=250
碌
A
V
DS
=10V, I
D
=5A
V
GS
=4V, I
D
=5A
V
DS
=10V,
f=1.0MHz,
V
GS
=0V
I
D
=5A, V
DD
20V,
R
L
=4鈩?
V
GS
=5V,
see Fig. 4 on page 16.
I
SD
=10A, V
GS
=0V
I
SD
=5A, di/dt=100A/
碌
s
4.5 (
Ta=25擄C, with all circuits operating, without heatsink
)
30 (
Tc=25擄C,with all circuits operating, with infinite heatsink
)
27.8 (
Junction-Air, Ta=25擄C, with all circuits operating
)
4.17 (
Junction-Case, Tc=25擄C, with all circuits operating
)
1000 (
Between fin and lead pin, AC
)
150
鈥?0 to +150
胃
j-a
胃
j-c
V
ISO
Tch
Tstg
sEquivalent
circuit diagram
3
7
10
2
6
11
1
5
12
Characteristic curves
I
D
-V
DS
Characteristics (Typical)
15
14
12
10
I
D
-V
GS
Characteristics (Typical)
15
14
12
10
R
DS(ON)
-I
D
Characteristics (Typical)
0.20
(T
a
=25擄C)
4.0V
(V
DS
=20V)
T
a
=25擄C
V
GS
=4V
10V
0.16
I
D
(A)
I
D
(A)
3.5V
(ON)
(鈩?
0.12
8
3.3V
8
6
T
C
=25擄C
6
4
2
0
0
3.0V
R
DS
鈥?0擄C
0.08
4
25擄C
0.04
V
GS
=2.7V
2
0
2
4
6
8
10
0
1
2
3
4
5
0
0
2
4
6
8
10
12
14 15
V
DS
(V)
V
GS
(V)
I
D
(A)
Re
(yfs)
-I
D
Characteristics (Typical)
20
10
R
DS(ON)
-T
C
Characteristics (Typical)
0.20
0.18
Capacitance-V
DS
Characteristics (Typical)
2000
1000
(V
DS
=10V)
I
D
=5A
V
GS
=4V
V
GS
=0V
(T
a
=25擄C) f=1MHz
T
C
=鈥?0擄C
0.16
Re (yfs) (S)
0.14
25擄C
125擄C
(ON)
(鈩?
0.12
0.10
0.08
0.06
0.04
0.02
Capacitance (pF)
Ciss
Coss
1
R
DS
100
Crss
0.1
0.05
0.1
1
10
20
0
鈥?0
0
50
100
150
10
0
10
20
30
40
50
I
D
(A)
T
C
(擄C)
V
DS
(V)
I
DR
-V
SD
Characteristics (Typical)
15
Safe Operating Area (SOA)
20
10
0
碌
s
P
T
-T
a
Characteristics
40
35
30
25
(T
a
=25擄C)
All Circuits Operating
10
12
10
V
S
=
s
1m
10
m
s
4V
V
G
I
DR
(A)
I
D
(A)
(O
N)
P
T
(W)
9
0V
S
LI
M
IT
E
D
R
D
W
20
15
10
ith
6
1
In
fin
ite
He
at
sin
k
3
T
C
=25擄C
Single Pulse
5
Without Heatsink
1
10
100
0
0
0.5
1.0
1.5
0.1
0.1
0
0
50
100
150
V
SD
(V)
V
DS
(V)
T
a
(擄C)
100
1
