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SKM50GB123D_1 Datasheet

  • SKM50GB123D_1

  • Semikron International [SEMITRANS㈢ M IGBT Modules]

  • SEMIKRON   SEMIKRON

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上傳產(chǎn)品規(guī)格書

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Absolute Maximum Ratings
Symbol
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
Conditions
1)
R
GE
= 20 k鈩?/div>
T
case
= 25/80
擄C
T
case
= 25/80
擄C;
t
p
= 1 ms
per IGBT, T
case
= 25
擄C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
T
case
= 25/80
擄C
T
case
= 25/80
擄C;
t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 擄C
t
p
= 10 ms; T
j
= 150 擄C
Values
... 123 D
1200
1200
50 / 40
100 / 80
鹵
20
310
鈥?40 . . .+150 (125)
2 500
Class F
40/125/56
50 / 40
100 / 80
550
1500
Units
V
V
A
A
V
W
擄C
V
SEMITRANS
廬
M
IGBT Modules
SKM 50 GB 123 D
SKM 50 GAL 123 D
Diodes
I
F
= 鈥?I
C
I
FM
= 鈥?I
CM
I
FSM
I
2
t
A
A
A
2
s
SEMITRANS 2
Characteristics
Symbol
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
V
CEsat
g
fs
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on 5)
E
off 5)
Diodes
8)
V
F
= V
EC
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
Conditions
1)
V
GE
= 0, I
C
= 1 mA
V
GE
= V
CE
, I
C
= 2 mA
錚?/div>
T
j
= 25
擄C
V
GE
= 0
錕?frac12;
V
CE
= V
CES
錚?/div>
T
j
= 125
擄C
V
GE
= 20 V, V
CE
= 0
錚?/div>
I
C
= 40 A
錚?/div>
V
GE
= 15 V;
錕?frac12;
錚?/div>
I
C
= 50 A
錚?/div>
T
j
= 25 (125)
擄C
錚?/div>
V
CE
= 20 V, I
C
= 40 A
per IGBT
錚?/div>
V
GE
= 0
錕?frac12;
V
CE
= 25 V
錚?/div>
f = 1 MHz
min.
typ.
max.
鈥?/div>
6,5
1
鈥?/div>
200
3(3,7)
鈥?/div>
鈥?/div>
350
4000
600
300
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2,2
鈥?/div>
1,2
22
鈥?/div>
鈥?/div>
0,4
0,7
0,05
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
m鈩?/div>
A
碌C
擄C/W
擄C/W
擄C/W
GB
GAL
鈮?/div>
V
CES
鈥?/div>
4,5
5,5
鈥?/div>
0,3
鈥?/div>
3
鈥?/div>
鈥?/div>
鈥?/div>
2,5(3,1)
鈥?/div>
2,7(3,5)
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3300
500
220
鈥?/div>
70
60
400
45
7
4,5
1,85(1,6)
2,0(1,8)
鈥?/div>
鈥?/div>
23(35)
2,3(7)
鈥?/div>
鈥?/div>
鈥?/div>
錚?/div>
錚?/div>
錚?/div>
錕?frac12;
錚?/div>
錚?/div>
錚?/div>
V
CC
= 600 V
V
GE
= + 15 V / - 15 V
3)
I
C
= 40 A, ind. load
R
Gon
= R
Goff
= 27
鈩?/div>
T
j
= 125
擄C
Features
鈥?/div>
MOS input (voltage controlled)
鈥?/div>
N channel, Homogeneous Si
鈥?/div>
Low inductance case
鈥?/div>
Very low tail current with low
temperature dependence
鈥?/div>
High short circuit capability,
self limiting to 6 * I
cnom
鈥?/div>
Latch-up free
鈥?/div>
Fast & soft inverse CAL
diodes
8)
鈥?/div>
Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
鈥?/div>
Large clearance (10 mm) and
creepage distances (20 mm).
Typical Applications:
鈫?/div>
B 6 - 85
鈥?/div>
Three phase inverter drives
鈥?/div>
Switching (not for linear use)
1)
2)
3)
5)
8)
錚?/div>
I
F
= 40 A
錚?/div>
V
GE
= 0 V;
錚?/div>
錕?frac12;
I
F
= 50 A
錚?/div>
T
j
= 25 (125)
擄C
錚?/div>
T
j
= 125 擄C
T
j
= 125 擄C
I
F
= 40 A; Tj = 25 (125) 擄C
2)
I
F
= 40 A; T
j
= 25 (125)
擄C
2)
Thermal Characteristics
per IGBT
R
thjc
per diode
R
thjc
per module
R
thch
T
case
= 25
擄C,
unless otherwise
specified
I
F
= 鈥?I
C
, V
R
= 600 V,
鈥?di
F
/dt = 800 A/碌s
,
V
GE
= 0 V
Use V
GEoff
= -5 ... -15 V
See fig. 2 + 3; R
Goff
= 27
鈩?/div>
CAL = Controlled Axial Lifetime
Technology.
Case and mech. data
鈫?/div>
B 6 - 86
SEMITRANS 2
漏
by SEMIKRON
0898
B 6 鈥?81

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