Si4684DY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
configuration are included. The corresponding values
for the Cauer/Filter configuration are available upon
request.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (擄C/W)
Junction to
RT1
RT2
RT3
RT4
Junction to
CT1
CT2
CT3
CT4
Ambient
5.4825
14.0940
11.8997
18.5795
Ambient
8.6182 m
93.6547 m
6.1489
3.2294
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
Foot
2.7730
5.6035
12.5420
6.9783
Foot
617.0550 碌
18.1606 m
73.2626 m
9.1092 m
Thermal Capacitance (Joules/擄C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number:74111
Revision 14-Nov-05
www.vishay.com
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