鈻?/div>
General Description
This Power MOSFET is produced using SemiWell鈥檚 advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for Battery protection circuit, Load switch and other power
management application.
8-SOIC
D
1
D
2
D
2
D
1
S
1
G
1
G
S
2 2
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
A
= 25
擄C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T
A
=25
擄C
)
Total Power Dissipation Single Operation (T
A
=70
擄C
)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
Parameter
Value
20
6.5
30
Units
V
A
A
V
W
W
擄C
擄C
鹵
12
2.0
1.28
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Value
Min.
-
Typ.
-
Max.
62.5
Units
擄C/W
December, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6