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SFP70N06 Datasheet

  • SFP70N06

  • N-Channel MOSFET

  • 7頁(yè)

  • ETC

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Wisdom
Technologies Int鈥檒
SFP70N06
N-Channel MOSFET
Features
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Low R
DS
(on) (0.015鈩?)@V
GS
=10V
Low Gate Charge (Typical 65nC)
Low Crss (Typical 150pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175擄C)
Symbol
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2. Drain
1. Gate
鈼€
鈼?/div>
鈼?/div>
鈻?/div>
3. Source
General Description
This Power MOSFET is produced using Wisdom鈥檚 advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
擄C)
Continuous Drain Current(@T
C
= 100
擄C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 擄C)
Derating Factor above 25 擄C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 3)
(Note 1)
Parameter
Value
60
70
51
280
鹵25
800
7.0
158
1.05
- 55 ~ 175
300
Units
V
A
A
A
V
mJ
V/ns
W
W/擄C
擄C
擄C
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
0.5
-
Max.
0.95
-
62.5
Units
擄C/W
擄C/W
擄C/W
June, 2004. Rev. 0.
Copyright@Wisdom Technologies International, All rights reserved.
1/7

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