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SFI9614 Datasheet

  • SFI9614

  • ADVANCED POWER MOSFET

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
錕?frac12;
Avalanche Rugged Technology
錕?frac12;
Rugged Gate Oxide Technology
錕?frac12;
Lower Input Capacitance
錕?frac12;
Improved Gate Charge
錕?frac12;
Extended Safe Operating Area
錕?frac12;
Lower Leakage Current : 10
碌A(chǔ)
(Max.) @ V
DS
= -250V
錕?frac12;
Low R
DS(ON)
: 3.5
鈩?/div>
(Typ.)
1
SFW/I9614
BV
DSS
= -250 V
R
DS(on)
= 4.0
鈩?/div>
I
D
= -1.6 A
D
2
-PAK
2
I
2
-PAK
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
o
Total Power Dissipation (T
A
=25 C) *
2
O
1
O
1
O
3
O
o
o
Value
-250
-1.6
-1.0
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-6.5
+ 30
_
112
-1.6
2.0
-4.8
3.1
20
0.16
- 55 to +150
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
o
T
J
, T
STG
T
L
o
C
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.25
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
餂?001
Fairchild Semiconductor Corporation

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