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SFI9540 Datasheet

  • SFI9540

  • P-CHANNEL POWER MOSFET

  • 6頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175 C Operating Temperature
n
Lower Leakage Current : 10
碌A(chǔ)
(Max.) @ V
DS
= -100V
n
Low R
DS(ON)
: 0.161
鈩?/div>
(Typ.)
1
SFW/I9540
BV
DSS
= -100 V
R
DS(on)
= 0.2
鈩?/div>
I
D
= -17 A
D
2
-PAK
2
o
I
2
-PAK
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
1/8鈥?/div>
from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
-100
-17
-12
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-68
鹵30
578
-17
13.2
-6.5
3.8
132
0.88
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.14
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. C

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