鈥?/div>
V
VDE 0884 Available with Option 1
鈥?SMD Option 鈥?See SFH6186/6286 Data Sheet
D E
Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode
1
Cathode
2
SFH628A
Anode/
Cathode
1
SFH618A
4
Collector
3
Emitter
4
Collector
3
Emitter
3
4
Cathode/
Anode
2
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
4擄
typ.
.018 (.46)
.022 (.56)
.300 (7.62) typ.
10擄
.020 (.508 )
.035 (.89)
.050 (1.27)
0.100 (2.54)
3擄鈥?擄
.008 (.20)
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
APPLICATIONS
鈥?Telecom
鈥?Industrial Controls
鈥?Battery Powered Equipment
鈥?Of鏗乧e Machines
DESCRIPTION
The SFH618A/628A feature a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sili-
con planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V
RMS
or DC.
Maximum Ratings
Emitter
Reverse Voltage (SFH618A)............................................................. 6.0 V
DC Forward Current (SFH628A) .................................................. 鹵50 mA
Surge Forward Current (t
p
鈮?/div>
10 碌s) (SFH628A) ............................... 鹵2.5 A
Total Power Dissipation ................................................................. 70 mW
Detector
Collector-emitter Voltage ................................................................... 55 V
Emitter-collector Voltage................................................................... 7.0 V
Collector Current ............................................................................ 50 mA
Collector Current (t
p
鈮?/div>
1.0 ms) ....................................................... 100 mA
Total Power Dissipation ............................................................... 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ..................................................................... 5300 V
RMS
Creepage Distance ....................................................................
鈮?/div>
7.0 mm
Clearance ...................................................................................
鈮?/div>
7.0 mm
Insulation Thickness between Emitter and Detector ..................
鈮?/div>
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ..................................................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
擄
C.................................................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V,
T
A
=100
擄
C...............................................................
鈮?/div>
10
11
鈩?/div>
Storage Temperature Range ............................................. 鈥?5 to +150
擄
C
Ambient Temperature Range............................................. 鈥?5 to +100
擄
C
Junction Temperature ......................................................................100
擄
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
鈮?/div>
1.5 mm) ..........................................260
擄
C
www.vishay.com
2鈥?42
Document Number: 83673
Revision 17-August-01
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