餂?/div>
Optocoupler
High Reliability
FEATURES
鈥?Variety of Current Transfer Ratios at I
F
=10 mA
鈥?SFH610A/617A-1, 40鈥?0%
鈥?SFH610A/617A-2, 63鈥?25%
鈥?SFH610A/617A-3, 100鈥?00%
鈥?SFH610A/617A-4, 160鈥?20%
鈥?Low CTR Degradation
鈥?Good CTR Linearity Depending on Forward Current
鈥?Withstand Test Voltage, 5300 V
RMS
鈥?High Collector-Emitter Voltage,
V
CEO
=70 V
鈥?Low Saturation Voltage
鈥?Fast Switching Times
鈥?Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
鈥?Temperature Stable
鈥?Low Coupling Capacitance
鈥?End-Stackable, .100" (2.54 mm) Spacing
鈥?High Common-Mode Interference Immunity
(Unconnected Base)
鈥?Underwriters Lab File #52744
鈥?/div>
V
VDE 0884 Available with Option 1
D E
SFH610A/617A
Dimensions in Inches (mm)
2
1
pin one ID
SFH610A
.255 (6.48)
.268 (6.81)
Anode
1
Cathode
2
4
Emitter
3
Collector
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
4擄
typ.
.018 (.46)
.022 (.56)
10
擄
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
3擄鈥?擄
.008 (.20)
.012 (.30)
.300 (7.62) typ.
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
SFH617A
Anode
1
4
Collector
3
Emitter
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V
RMS
or DC.
Speci鏗乧ations subject to change.
Cathode
2
Maximum Ratings
Emitter
Reverse Voltage.........................................................................6.0 V
DC Forward Current.................................................................60 mA
Surge Forward Current (t
P
鈮?/div>
10
碌
s) .............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage ............................................................70 V
Emitter-Collector Voltage ...........................................................7.0 V
Collector Current .....................................................................50 mA
Collector Current (t
P
鈮?/div>
1.0 ms).................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74 ................. 5300 V
RMS
Creepage............................................................................
鈮?/div>
7.0 mm
Clearance ...........................................................................
鈮?/div>
7.0 mm
Insulation Thickness between Emitter and Detector ..........
鈮?/div>
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .......................................
鈮?/div>
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
擄
C.........................................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V,
T
A
=100
擄
C.......................................................
鈮?/div>
10
11
鈩?/div>
Storage Temperature Range ......................................鈥?5 to +150
擄
C
Ambient Temperature Range......................................鈥?5 to +100
擄
C
Junction Temperature .............................................................. 100
擄
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
鈮?/div>
1.5 mm).................................... 260
擄
C
錚?/div>
2001 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
2鈥?28
March 27, 2000-00
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