SF8GZ47,SF8JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak off鈭扴tate Voltage
Repetitive Peak Reverse Voltage
l
Average On鈭扴tate Current
l
Isolation Voltage
: V
DRM
= 400, 600V
: V
RRM
= 400, 600V
: I
T (AV)
= 8A
: V
Isol
=
1500V
AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off鈭扴tate Voltage
and Repetitive Peak6
Reverse Voltage
Non鈭扲epetitive Peak
Reverse Voltage
(Non鈭扲epetitive <5ms,
T
j
= 0~125擄C)
SF8GZ47
SF8JZ47
SF8GZ47
SF8JZ47
V
RSM
SYMBOL
V
DRM
V
RRM
RATING
400
600
500
720
8
12.6
120 (50 Hz)
132 (60 Hz)
72
100
5
0.5
10
鈭?
2
鈭?0~125
鈭?0~125
1500
V
V
UNIT
Average On鈭扴tate Current
(Half Sine Waveform Tc = 72擄C)
R.M.S On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non鈭扲epetitive)
I t Limit Value
Critical Rate of Rise of On鈭扴tate
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
2
I
T (AV)
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
V
ISOL
2
A
A
A
A s
A / 碌s
W
W
V
V
A
擄C
擄C
V
2
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
鈥?/div>
鈥?/div>
13鈭?0H1B
Note 1: di / dt test condition,
V
DRM
= 0.5 脳 Rated, I
TM
鈮?/div>
25A, t
gw
鈮?/div>
10碌s,
t
gr
鈮?/div>
250ns, i
gp
= I
GT
脳 2.0
1
2001-07-13
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