SF5GZ47,SF5JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5GZ47,SF5JZ47
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak off鈭扴tate Voltage
Repetitive Peak Reverse Voltage
l
Average On鈭扴tate Current
l
Isolation Voltage
: V
DRM
= 400, 600V
: V
RRM
= 400, 600V
: I
T (AV)
= 5A
: V
Isol
=
1500V
AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off鈭扴tate Voltage
and Repetitive Peak
Reverse Voltage
Non鈭扲epetitive Peak
Reverse Voltage
(Non鈭扲epetitive<5ms,
T
j
= 0~125擄C)
SF5GZ47
SF5JZ47
SF5GZ47
V
RSM
SF5JZ47
I
T (AV)
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
V
Isol
2
SYMBOL
V
DRM
V
RRM
RATING
400
UNIT
V
600
500
V
720
5
7.8
80 (50Hz)
88 (60Hz)
32
100
5
0.5
10
鈭?
2
鈭?0~125
鈭?0~125
1500
A
A
A
A s
A / 碌s
W
W
V
V
A
擄C
擄C
V
2
Average On鈭扴tate Current
(Half Sine Waveform Tc = 85擄C)
R.M.S. On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non鈭扲epetitive)
I t Limit Value
Critical Rate of Rise of On鈭扴tate
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
2
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
鈥?/div>
鈥?/div>
13鈭?0H1B
Note 1: di / dt test condition, V
DRM
= 0.5 脳 Rated, I
TM
鈮?/div>
15A, t
gw
鈮?/div>
10碌s,
t
gr
鈮?/div>
250ns, i
gp
= I
GT
脳 2.0
1
2001-07-13
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