SF25GZ51,SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51,SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak Off鈭扴tate Voltage : V
DRM
= 400, 600 V
Repetitive Peak Reverse Voltage : V
RRM
= 400, 600 V
l
Average On鈭扴tate Current
l
Isolation Voltage
: I
T (AV)
= 25 A
: V
Isol
=
1500
V AC
Unit in mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off鈭扴tate Voltage and
Repetitive Peak Reverse
Voltage
Non鈭扲epetitive Peak
Reverse Voltage
(Non鈭扲epetitive < 5 ms,
T
j
= 0~125擄C)
Average On鈭扴tate Current
(Half Sine Waveform)
R.M.S On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non鈭扲epetitive)
I t Limit Value
Critical Rate of Rise of On鈭扴tate
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
2
SYMBOL
V
DRM
V
RRM
RATING
400
UNIT
SF25GZ51
SF25JZ51
SF25GZ51
V
600
500
V
RSM
SF25JZ51
I
T (AV)
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
V
Isol
2
V
720
25
39
350 (50 Hz)
385 (60 Hz)
612
100
5
0.5
10
-5
2
-40~125
-40~125
1500
A
A
A
A s
A / 碌s
W
W
V
V
A
擄C
擄C
V
2
JEDEC
EIAJ
TOSHIBA
Weight : 5.9g
鈥?/div>
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13鈭?6A1B
Note :
di / dt Test Condition, i
G
= 30mA, t
gw
= 10碌s, t
gr
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