SF16GZ51,SF16JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF16GZ51,SF16JZ51
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak Off鈭扴tate Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage : V
RRM
= 400,600V
l
Average On鈭扴tate Current
l
Isolation Voltage
: I
T (AV)
=
16A
: V
Isol
=
1500V
AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off鈭扴tate Voltage and
Repetitive Peak
Reverse Voltage
Non鈭扲epetitive Peak
Reverse Voltage
(Non鈭扲epetitive <5ms,
T
j
= 0~125擄C)
SF16GZ51
SF16JZ51
SF16GZ51
V
RSM
SF16JZ51
I
T(AV)
I
T(RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
V
Isol
2
SYMBOL
V
DRM
V
RRM
RATING
400
UNIT
V
600
500
V
720
16
25
250 (50Hz)
275 (60Hz)
312
100
5
0.5
10
鈭?
2
鈭?0~125
鈭?0~125
1500
A
A
A
A s
A / 碌s
W
W
V
V
A
擄C
擄C
V
2
Average On鈭扴tate Current
(Half Sine Waveform)
R.M.S On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non-Repetitive)
I t Limit Value
Critical Rate of Rise of On鈭扴tate
Curret
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
2
JEDEC
JEITA
TOSHIBA
Weight: 5.9g
鈥?/div>
鈥?/div>
13鈭?6A1B
Note :
di / dt Test Condition, i
G
= 30mA, t
gw
= 10碌s, t
gr
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