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SF0R3G42 Datasheet

  • SF0R3G42

  • LOW POWER SWITCHING AND CONTROL APPLICATIONS

  • 7頁(yè)

  • TOSHIBA

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SF0R3G42
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R3G42
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
l
Repetitive Peak Off鈭扴tate Voltage : V
DRM
= 400V
Repetitive Peak Reverse Voltage
: V
RRM
= 400V
l
Average On鈭扴tate Current
l
Plastic Mold Type.
: I
T (AV)
= 300mA
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
(R
GK
= 1k鈩?
Non鈭扲epetitive Peak Reverse
Voltage (Non-Repetitive<5ms,
R
GK
= 1k鈩? T
j
= 0 ~ 125擄C)
Average On鈭扴tate Current
(Half Sine Waveform Ta = 45擄C)
R.M.S On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non-Repetitive)
I t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
SYMBOL
V
DRM
V
RRM
V
RSM
I
T (AV)
I
T (RMS)
I
TSM
I t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
RATING
400
UNIT
V
500
V
300
450
9 (50Hz)
9.9 (60Hz)
0.4
0.1
0.01
3.5
鈭?
125
鈭?0~125
鈭?0~125
mA
mA
A
A s
W
W
V
V
mA
擄C
擄C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO鈭?2
SC鈭?3
13鈭?A1A
Note:
Should be used with gate resistance as follows.
1
2001-07-13

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