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Preliminary data

SDP10S30, SDB10S30

SDT10S30

Silicon Carbide Schottky Diode

Revolutionary semiconductor

material - Silicon Carbide

Switching behavior benchmark

No reverse recovery

No temperature influence on

the switching behavior

No forward recovery

P-TO220-2-2.

Parameter

Continuous forward current,

T

C

=100擄C

RMS forward current,

f=50Hz

T

C

=25擄C,

t

p

=10ms

Repetitive peak reverse voltage

Surge peak reverse voltage

Power dissipation,

T

C

=25擄C

Operating and storage temperature

Page 1

Product Summary

V

V

RRM

300

Q

c

I

F

P-TO220-3.SMD

23

10

P-TO220-3-1.

nC

A

Type

SDP10S30

SDB10S30

SDT10S30

Package

P-TO220-3-1.

P-TO220-2-2.

Ordering Code

Q67040-S4372

Q67040-S4447

Marking

D10S30

D10S30

D10S30

Pin 1

n.c.

n.c.

PIN 2

C

C

PIN 3

A

A

P-TO220-3.SMD Q67040-S4373

C

Value

10

14

36

45

100

6.5

300

300

65

A

Unit

A

Maximum Ratings,at

T

j

= 25 擄C, unless otherwise specified

Symbol

I

F

I

FRMS

Surge non repetitive forward current, sine halfwave

I

FSM

Repetitive peak forward current

T

j

=150擄C,

T

C

=100擄C,

D=0.1

I

FRM

I

FMAX

i

2

dt

Non repetitive peak forward current

t

p

=10碌s,

T

C

=25擄C

i

2

t

value,

T

C

=25擄C,

t

p

=10ms

A虜s

V

W

擄C

V

RRM

V

RSM

P

tot

T

j ,

T

stg

-55... +175

2001-12-04

next

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