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SD
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
BE
(sat)
t
on
t
stg
t
f
f
T
C
ob
100
2000
6000
1.1
1.7
0.5
4.5
1.2
50
20
12000
1.3
2.2
V
V
min
Specification
typ
max
10
3
Unit
(T
a
=25擄C)
Unit
V
V
V
A
A
A
A
A
V
W
擄C
擄C
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=2mA
V
CC
30V,
I
C
=1A,
I
B1
=鈥揑
B2
=2mA
V
CE
=12V, I
E
=鈥?.1A
V
CB
=10V, f=1MHz
(T
a
=25擄C)
碌
A
mA
V
2.5 (PW鈮?ms, D
u
鈮?0%)
0.2
1.5
2.5 (PW鈮?.5ms, D
u
鈮?0%)
120
3 (T
a
=25擄C)
150
鈥?0 to +150
碌
s
碌
s
碌
s
MHz
pF
sEquivalent
circuit diagram
16 15
1
14 13
12 11
10 9
qDiode
for flyback voltage absorption
Symbol
V
R
V
F
min
120
1.6
10
100
Specification
typ
max
Unit
V
V
I
R
=10
碌
A
I
F
=1A
Conditions
3
5
7
I
R
8
碌
A
ns
V
R
=120V
I
F
=鹵100mA
R
1
R
2
4
2
R
1
: 2.5k鈩?typ R
2
: 200鈩?typ
6
t
rr
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
2.5
I
B
=10mA
4m
A
h
FE
-I
C
Characteristics (Typical)
10000
h
FE
-I
C
Temperature Characteristics (Typical)
10000
5000
C
5
擄
12
擄
C
75
C
T
擄
25
C
0
擄
鈥?
a
=
(V
CE
=4V)
typ
(V
CE
=4V)
A
mA
2m
1.2
A
0.6m
0.4m
A
5000
2.0
0.3mA
I
C
(A)
1.5
h
FE
1000
h
FE
0.1
0.5
1
2.5
1000
500
1.0
500
0.5
0
1
2
3
4
5
6
100
0.03 0.05
100
0.03 0.05
0.1
0.5
1
2.5
V
CE
(V)
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
3
V
CE
(sat)-I
B
Characteristics (Typical)
3
I
C
-V
BE
Temperature Characteristics (Typical)
2.5
(I
C
/ I
B
=1000)
(V
CE
=4V)
2.0
2
V
CE
(sat) (V)
V
CE
(sat) (V)
2
1.5
I
C
=2A
I
C
=1A
I
C
=0.5A
I
C
(A)
1.0
1
25擄C
鈥?0擄C
1
Ta=125擄C
75擄C
0.5
0
0.2
0.5
1
2.5
0
0.1
0.5
1
5
10
50
100
0
0
1
T
a
=
125
擄
C
75
擄
C
25
擄
C
鈥?0
擄C
2
3
I
C
(A)
I
B
(mA)
V
BE
(V)
胃
j-a
-PW Characteristics
50
3
4
3
2
P
T
-T
a
Characteristics
5
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
Safe Operating Area (SOA)
10
0
碌
s
1m
s
2
1
m
10
胃
j鈥揳
(擄C / W)
s
P
T
(W)
10
1
5
1
0.1
0.05
Without Heatsink
Single Pulse
T
a
=25擄C
1
1
5
10
50 100
500 1000
0
0
I
C
(A)
50
100
150
0.5
0.03
3
5
10
50
100
PW (mS)
Ta (擄C)
V
CE
(V)
166
1
