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SD
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
t
on
t
stg
t
f
f
T
C
ob
E
S/B
40
1.2
18.0
3.6
20
50
1.2
30
400
700
min
Specification
typ
max
10
2.8
45
2000
0.2
0.6
2.0
V
V
V
Unit
(T
a
=25擄C)
Unit
V
V
V
A
A
mA
W
擄C
擄C
擄C/W
Conditions
V
CB
=30V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=0.5A
I
C
=0.5A, I
B
=5mA
I
C
=1A, I
B
=5mA
I
FEC
=1A
V
CC
10V,
I
C
=0.5A,
I
B1
=5mA, I
B2
=0A
V
CE
=12V, I
E
=鈥?.2A
V
CB
=10V, f=1MHz
L=10mH, Single pulse
碌
A
mA
V
3 (PW鈮?ms, D
u
鈮?0%)
30
3 (T
a
=25擄C)
150
鈥?0 to +150
41.6
碌
s
碌
s
碌
s
MHz
pF
mJ
胃
j鈥揳
sEquivalent
circuit diagram
15,16
13,14
11,12
9,10
1
R
B
R
BE
2
3
R
B
R
BE
4
5
R
B
R
BE
6
7
R
B
R
BE
8
R
B
: 800鈩?typ
R
BE
: 2k鈩?typ
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
3
m
I
B
=30mA
h
FE
-I
C
Characteristics (Typical)
1000
h
FE
-I
C
Temperature Characteristics (Typical)
1000
(V
CE
=4V)
typ
(V
CE
=4V)
A
12
8mA
5mA
2
500
500
T
a
=125擄C
I
C
(A)
h
FE
3mA
2mA
h
FE
75擄C
25擄C
鈥?0擄C
1
1mA
0
0
1
2
3
4
5
6
100
0.03 0.05
0.1
0.5
1
3
100
0.03 0.05
0.1
0.5
1
3
V
CE
(V)
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
3
V
CE
(sat)-I
B
Characteristics (Typical)
1
I
C
-V
BE
Temperature Characteristics (Typical)
(I
C
/ I
B
=100)
V
CE
(sat) (V)
1
Ta
25
擄
C
V
CE
(sat) (V)
2
25
=1
擄
C
75
擄
C
I
C
=1A
鈥?0擄C
I
C
=0.5A
0
0.2
0.5
1
3
0
1
5
10
30
I
C
(A)
I
B
(mA)
胃
j-a
-PW Characteristics
50
3
4
3
2
P
T
-T
a
Characteristics
5
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
Safe Operating Area (SOA)
1mS
胃
j鈥揳
(擄C / W)
2
P
T
(W)
10
1
1
5
I
C
(A)
50
100
150
0.5
1
1
1
5
10
50 100
500 1000
0
0
0.1
5
Single Pulse
Without Heatsink
T
a
=25擄C
10
50
PW (mS)
Ta (擄C)
V
CE
(V)
164
1
