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SD
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
BE
(sat)
V
FEC
t
on
t
stg
t
f
f
T
C
ob
1
85
2000
100
5000
1.0
1.7
1.2
0.6
3.0
1.0
30
20
min
Specification
typ
max
10
3
115
12000
1.3
2.2
1.8
V
V
V
Unit
(T
a
=25擄C)
Unit
V
V
V
A
A
A
W
擄C
擄C
擄C/W
Conditions
V
CB
=85V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=2mA
I
FEC
=1A
V
CC
30V,
I
C
=1A,
I
B1
=鈥揑
B2
=2mA
V
CE
=12V, I
E
=鈥?.1A
V
CB
=10V, f=1MHz
碌
A
mA
V
2.5 (PW鈮?ms, D
u
鈮?0%)
0.1
3 (T
a
=25擄C)
150
鈥?0 to +150
41.6
碌
s
碌
s
碌
s
MHz
pF
胃
j鈥揳
sEquivalent
circuit diagram
15,16
1
R
1
R
2
2
3
13,14
5
11,12
7
9,10
4
6
8
R
1
: 4k鈩?typ R
2
: 150鈩?typ
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
2.5
I
B
=5mA
1mA
A
0.5m
h
FE
-I
C
Characteristics (Typical)
20000
10000
typ
h
FE
-I
C
Temperature Characteristics (Typical)
20000
10000
5000
擄
C
25
=1
擄
C
T
a
75 C
擄
25
C
0
擄
鈥?
(V
CE
=4V)
(V
CE
=4V)
2.0
0.3m
A
5000
I
C
(A)
1.5
h
FE
h
FE
0.1
0.5
1
2.5
1000
500
1000
500
1.0
0.2mA
0.5
100
100
50
0.03 0.05
0.1
0.5
1
2.5
0
0
1
2
3
4
5
6
50
0.03 0.05
V
CE
(V)
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
2
V
CE
(sat)-I
B
Characteristics (Typical)
3
I
C
-V
BE
Temperature Characteristics (Typical)
2.5
(I
C
/ I
B
=1000)
(V
CE
=4V)
2.0
2
I
C
=4A
V
CE
(sat) (V)
V
CE
(sat) (V)
1
T
a
=125擄C
75擄C
25擄C
鈥?0擄C
I
C
=2A
I
C
(A)
1.5
1
I
C
-1A
0.5
0
0.3
0.5
1
2.5
0
0.1
0.5
1
5
10
50 100
0
0
1
125
擄
C
75
擄
C
25
擄
C
鈥?0
擄
C
1.0
T
a
=
2
3
I
C
(A)
I
B
(mA)
V
BE
(V)
胃
j-a
-PW Characteristics
50
P
T
-T
a
Characteristics
3
4
3
2
Safe Operating Area (SOA)
5
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
10
1m
s
10
ms
0
碌
s
胃
j鈥揳
(擄C / W)
2
1
P
T
(W)
1
5
1
I
C
(A)
10
0.5
0.1
0.05
Without Heatsink
1
1
5
10
50
100
500 1000
Single Pulse
T
a
=25擄C
0
0
50
100
150
0.03
3
5
10
50
100
PW (mS)
Ta (擄C)
V
CE
(V)
163
1
