鈥⑩€⑩€?/div>
SD
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
BE
(sat)
V
FEC
t
on
t
stg
t
f
f
T
C
ob
1.1
50
2000
60
5000
1.2
1.8
1.3
0.5
4.0
1.0
50
25
min
Specification
typ
max
10
3.5
70
12000
1.4
2.2
1.8
V
V
V
Unit
(T
a
=25擄C)
Unit
V
V
V
A
A
A
W
擄C
擄C
擄C/W
Conditions
V
CB
=50V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=2mA
I
FEC
=1A
V
CC
30V,
I
C
=1A,
I
B1
=鈥揑
B2
=2mA
V
CE
=12V, I
E
=鈥?.1A
V
CB
=10V, f=1MHz
碌
A
mA
V
2.5 (PW鈮?ms, D
u
鈮?0%)
0.1
3 (T
a
=25擄C)
150
鈥?0 to +150
41.6
碌
s
碌
s
碌
s
MHz
pF
胃
j鈥揳
sEquivalent
circuit diagram
15,16
1
R
1
R
2
2
3
13,14
5
11,12
7
9,10
4
6
8
R
1
: 3.5k鈩?typ R
2
: 200鈩?typ
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
2.5
2m
h
FE
-I
C
Characteristics (Typical)
10000
h
FE
-I
C
Temperature Characteristics (Typical)
10000
5000
擄
C
25
=1 5
擄
C
7
T
a
擄
C
25 C
0
擄
鈥?
(V
CE
=4V)
typ
(V
CE
=4V)
I
B
=10mA
A
A
1m
2.0
0.6
mA
m
0.4
A
5000
1.5
0.3
mA
I
C
(A)
h
FE
h
FE
0.1
0.5
1
2.5
1000
500
1000
500
1.0
0.5
100
100
50
0.03 0.05
0
0
1
2
3
4
5
6
50
0.03 0.05
0.1
0.5
1
2.5
V
CE
(V)
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
3
V
CE
(sat)-I
B
Characteristics (Typical)
3
I
C
-V
BE
Temperature Characteristics (Typical)
2.5
(I
C
/ I
B
=1000)
(V
CE
=4V)
2.0
Ta=125擄C
V
CE
(sat) (V)
V
CE
(sat) (A)
2
75擄C
25擄C
鈥?0擄C
2
I
C
=2A
I
C
(A)
1.5
1A
1.0
1
1
0.5A
0.5
0
0.2
0.5
1
2.5
0
0.1
0.5
1
5
10
50 100
0
0
1
T
a
=
125
75
擄
C
擄
C
25
擄
C
鈥?0
擄
C
2
3
I
C
(A)
I
B
(mA)
V
BE
(V)
胃
j-a
-PW Characteristics
50
3
4
3
2
P
T
-T
a
Characteristics
5
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
Safe Operating Area (SOA)
0
10
碌
S
1m
S
mS
10
胃
j鈥揳
(擄C / W)
2
1
P
T
(W)
I
C
(A)
10
1
0.5
5
1
Single Pulse
0.1
Without Heatsink
T
a
=25擄C
1
1
5
10
50 100
500 1000
0
0
50
100
150
0.05
3
5
10
50
100
PW (mS)
Ta (擄C)
V
CE
(V)
162
1
