Preliminary data
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDP20S30
SDB20S30
Product Summary
V
RRM
Q
c
I
F
P-TO220-3.SMD
300
23
2x10
P-TO220-3-1.
V
nC
A
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation, single diode mode,
T
C
=25擄C
Operating and storage temperature
Page 1
Type
SDP20S30
SDB20S30
Package
P-TO220-3-1.
Ordering Code
Q67040-S4419
Marking
D20S30
S20S30
1
2
3
P-TO220-3.SMD Q67040-S4374
Maximum Ratings,at
T
j
= 25 擄C, unless otherwise specified (per leg)
Parameter
Continuous forward current,
T
C
=100擄C
RMS forward current,
f=50Hz
T
C
=25擄C,
t
p
=10ms
Symbol
I
F
I
FRMS
Value
10
14
36
45
100
6.5
300
300
65
-55... +175
Unit
A
Surge non repetitive forward current, sine halfwave
I
FSM
Repetitive peak forward current
T
j
=150擄C,
T
C
=100擄C,
D=0.1
I
FRM
I
FMAX
i
2
dt
Non repetitive peak forward current
t
p
=10碌s,
T
C
=25擄C
i
2
t
value,
T
C
=25擄C,
t
p
=10ms
A虜s
V
W
擄C
V
RRM
V
RSM
P
tot
T
j ,
T
stg
2001-09-07