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SD8250 Datasheet

  • SD8250

  • RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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SD8250
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRIVE
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
250 W MIN. WITH 8.0 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
SD8250
BRANDING
STAN250A
DESCRIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPAC鈩?Hermetic
Metal/Ceramic package with internal Input/Output
matching structures.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
鈮?/div>
90擄C)
575
20
55
250
鈭?/div>
65 to +200
W
A
V
擄
C
擄
C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
(1)
0.28
擄C/W
*Applies only to rated RF amplifier operation
(1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions
July 19, 1994
1/5

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