廬
SD57030-01
RF POWER TRANSISTORS
The
LdmoST
FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 30 W with 13 dB gain @ 945 MHz
BeO FREE PACKAGE
s
s
s
s
DESCRIPTION
The SD57030-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57030-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
stations applications requiring high linearity.
M250
epoxy sealed
ORDER CODE
BRANDING
SD57030-01
XSD57030-01
PIN CONNECTION
1. Drain
2. Gate
3.Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70 C)
Max. O perating Junction Temperature
Storage T emperature
o
Value
65
鹵
20
4
74
200
-65 to 150
Uni t
V
V
A
W
o
o
C
C
THERMAL DATA
R
th (j-c)
Junction-Case Thermal Resistance
1.75
o
C/W
January 2000
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