廬
SD4590
RF POWER TRANSISTORS
800-960 MHz CELLULAR BASE STATION
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
GOLD METALLIZATION
DIFFUSED EMITTER BALLASTING
INTERNAL INPUT/OUTPUT MATCHING
COMMON EMITTER CONFIGURATION
DESIGNED FOR LINEAR OPERATION HIGH
SATURATED POWER CAPABILITY 26 VOLT,
900 MHz PERFORMANCE
P
OUT
=150 W MIN.
GAIN = 8.5 dB MIN.
IMD
3
= -28dB MAX. @ P
OUT
= 150W PEP
INHERENT RUGGEDNESS:
LOAD MISMATCH TOLERANCE OF
5:1 MIN. VSWR
3 dB OVERDRIVE CAPABILITY
ESD SENSITIVITY, CLASS 3 (MIL STD-883D
METHOD 3015)
M208
epoxy sealed
ORDER CODE
BRANDING
SD4590
SD4590
PIN CONNECTION
DESCRIPTION
The SD4590 is designed for both analog and
digital cellular base stations over the 800 to 960
MHz frequency range, specifically those systems
requiring the high linearity and efficiency afforded
by class AB operation. Integrated input/output
pre-matching
simplifies
amplifier
design.
Ruggedness, MTTF, and linearity are enhanced
using
diffused
emitter
resistors
and
refractory/gold metallization.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DI SS
T
j
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Max. O perating Junction Temperature
Storage Temperature
Value
65
28
3.5
25
300
200
-65 to 150
Uni t
V
V
V
A
W
o
o
1. Collector
2. Emitter
3.Base
C
C
THERMAL DATA
R
th (j-c)
Junction-Case Thermal Resistance
0.60
o
C/W
March 2000
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